Title :
A double diffused switching transistor for high-current, high-speed applications
Author :
Bittman, C.A. ; Aschner, J.F. ; Hare, W.F.J. ; Chaplin, N.J.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
4/1/1959 12:00:00 AM
Keywords :
Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Electron devices; Fabrication; Germanium alloys; Gold; Impurities; Leaching; Nickel; P-n junctions; Silicon; Switches; Tin; Voltage; Wafer bonding;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14487
