1013704

A developmental high-frequency silicon transistor

Bosenberg, W.A. ; Kestenbaum, A.L.

Radio Corp. of America, Somerville, N. J.

6

2

1959

4/1/1959 12:00:00 AM

244

244

Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Electron devices; Fabrication; Germanium alloys; Gold; Impurities; Leaching; Nickel; P-n junctions; Silicon; Switches; Tin; Voltage; Wafer bonding;

English

Electron Devices, IRE Transactions on

ieee

0096-2430

jour

10.1109/T-ED.1959.14488

1472531