Title :
Utilizing Reverse Short-Channel Effect for Optimal Subthreshold Circuit Design
Author :
Kim, Tae-Hyoung ; Keane, John ; Eom, Hanyong ; Kim, Chris H.
Author_Institution :
Univ. of Minnesota, Minneapolis
fDate :
7/1/2007 12:00:00 AM
Abstract :
The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.
Keywords :
VLSI; low-power electronics; network synthesis; power consumption; ISCAS benchmark circuits; circuit optimization; critical path delay; device current; device-size optimization method; energy consumption; exponential dependency; optimal subthreshold circuit design; power consumption; reduced drain-induced barrier lowering; reverse short-channel effect; Capacitance; Circuit simulation; Circuit synthesis; Delay; Drives; Energy consumption; Energy dissipation; Fluctuations; Optimization methods; Threshold voltage; Circuit optimization; process variation; reverse short-channel effect (RSCE); subthreshold operation;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2007.899239
