Title :
High-frequency, silicon, NPIN, oscillator transistor
Author_Institution :
Pacific Semiconductors, Inc., Culver City, Calif.
fDate :
4/1/1959 12:00:00 AM
Keywords :
Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Electron devices; Fabrication; Germanium alloys; Impurities; Leaching; Nickel; Oscillators; P-n junctions; Silicon; Switches; Voltage; Wafer bonding;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14489
