Title :
A technique to measure trap characteristics in CCD´s using X-rays
Author :
Gendreau, K.C. ; Prigozhin, G.Y. ; Huang, R.K. ; Bautz, M.W.
Author_Institution :
Center for Space Res., MIT, Cambridge, MA, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
An important type of radiation damage in CCD´s used for X-ray spectroscopy is the degradation of charge transfer efficiency (CTE). Traps associated with radiation-induced defects are the basic cause of the damage. Here, we describe a method to extract trap characteristics using small charge packets produced by individual X-ray photon interactions in rectangular imaging CCD´s. The method applies the principles of trap occupancy to the framestore CCD configuration, and uses data from CCD´s operating in their normal transfer mode. We have measured trap characteristics in radiation damaged CCD´s in a range of operating temperatures from 170-200 K, and have found that these data compare well to the expected phosphorus-vacancy (P-V) trap characteristics
Keywords :
CCD image sensors; X-ray detection; X-ray effects; X-ray imaging; X-ray spectrometers; electron traps; 170 to 200 K; CCDs; X-ray spectroscopy; charge transfer efficiency; framestore configuration; measurement technique; phosphorus-vacancy; radiation damage; radiation-induced defects; rectangular imaging; trap characteristics; Charge coupled devices; Charge transfer; Data mining; Electron traps; Extraterrestrial measurements; Optical imaging; Protons; Space missions; Spectroscopy; X-rays;
Journal_Title :
Electron Devices, IEEE Transactions on
