Title :
Design and fabrication of high-frequency diffused germanium transistors
Author_Institution :
Bell Telephone Laboratories, Inc., Allentown, Pa.
fDate :
4/1/1959 12:00:00 AM
Keywords :
Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Electron devices; Fabrication; Germanium; Impurities; Leaching; Nickel; P-n junctions; Silicon; Switches; Voltage; Wafer bonding;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14493
