• DocumentCode
    1013863
  • Title

    Characterization of a 4 Mbit bubble memory device with "Wide gap" permalloy propagation tracks

  • Author

    Inoue, H. ; Amatsu, M. ; Yanase, T. ; Majima, T. ; Kaneko, Y. ; Orihara, S. ; Iwasa, S.

  • Author_Institution
    Fujitsu Laboratories, Atsugi, Japan
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1681
  • Lastpage
    1683
  • Abstract
    A 4 Mbit bubble memory device with "wide gap" propagation tracks has been fabricated and characterized. The 4 Mbit device is composed of four 1 Mbit blocks which are architecturally designed to be compatible with an existing 1 Mbit device, and the relaxed function design has been employed to achieve functional compatibility, in addition to architectural compatibility. The results obtained in the characterization of functions, such as a generator, a detector, swap gates and replicate gates, show the realization to guarantee the same operational conditions as those of the 1 Mbit device. The overall operating margins of the fabricated chips were measured in the temperature range of 0°C to 90°C, and the temperature coefficients were found to be -0.18 %/°C to -0.20 %/°C. A compact package for the 4 Mbit chip was designed. The package size is 36.4 × 34 × 11.5 mm3and the number of pin-outs is 42. A sufficient operating margin was confirmed in the case temperature range of -10°C to 90°C. The power consumption of the device is 1.1 W, which is approximately 0.6 to 0.7 times as much as those reported so far.
  • Keywords
    Magnetic bubble memories; Permalloy memories; Character generation; Conductors; Detectors; Energy consumption; Packaging; Printing; Propagation losses; Semiconductor device measurement; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1064121
  • Filename
    1064121