High-Temperature Continuous-Wave Operation of GaInAsN–GaAs Quantum-Dot Laser Diodes Beyond 1.3 μm

Author

Fischer, M. ; Bisping, D. ; Marquardt, B. ; Forchel, A.

Author_Institution

Nanosyst. & Technol. GmbH, Gerbrunn

Volume

19

Issue

14

fYear

2007

fDate

7/15/2007 12:00:00 AM

Firstpage

1030

Lastpage

1032

Abstract

Internal laser parameters and characteristic temperature T₀ of a GaInAsN-GaAs quantum-dot (QD) laser emitting above 1350 nm were determined. Continuous-wave operation of GaInAsN-GaAs QD ridge waveguide laser diodes with an emission wavelength of 1355 nm at room temperature (RT) is reported for the first time. Low threshold currents of 16 mA are achieved at RT. Ground state laser emission is observed up to temperatures of 75degC with a resulting laser emission wavelength of 1395 nm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ridge waveguides; semiconductor lasers; waveguide lasers; wide band gap semiconductors; GalnAsN-GaAs; ground state laser emission; high-temperature continuous-wave operation quantum-dot laser diodes; internal laser parameters; ridge waveguide laser diodes; temperature 293 K to 298 K; temperature 75 degC; threshold currents; wavelength 1355 nm; wavelength 1395 nm; Diode lasers; Laser stability; Optical materials; Quantum dot lasers; Quantum dots; Semiconductor diodes; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers; Nitrogen compounds; quantum dots (QDs); ridge waveguides; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.898769

Filename

4252136