DocumentCode :
1013885
Title :
Operation temperature ranges for ion-implanted bubble devices with 1 µm bubbles
Author :
Mizuno, K. ; Urai, H.
Author_Institution :
NEC Corporation, Kawasaki, Japan
Volume :
21
Issue :
5
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1706
Lastpage :
1708
Abstract :
Operation temperature ranges for He+ and H2+ ion-implanted bubble devices with 1 μm bubbles have been studied under a 100 kHz circular in-plane drive field condition. Samples are 4 Mb on-chip-cache bubble memory chips, which were fabricated on (YSmLuBiCa)3(FeGe)5O12LPE garnet films. For He+ implantation, the high temperature limit for the operation is restricted to 50°C at 1.2 eV/Å3damage level. On the other hand, for H2+ implantation, an operation temperature range, from 0°C to 95°C, has been obtained with more than 30 Oe bias field margin at 0.8 eV/Å3damage level. The maximum operation temperature linearly decreases with increasing lattice strain for both implantations. This results from Curie temperature decrease in the implanted layer with increasing lattice strain. However, 35°C difference in operation temperature range is found between He+ and H2+ implantation at the same lattice strain. There seems to be a local difference in magnetic characteristics between He+ and H2+ implanted layers.
Keywords :
Magnetic bubble devices; Magnetic bubble memories; Magnetic thermal factors; Annealing; Cache storage; Garnet films; Lattices; Magnetic anisotropy; Magnetic field induced strain; Perpendicular magnetic anisotropy; Saturation magnetization; Temperature control; Temperature distribution;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1985.1064123
Filename :
1064123
Link To Document :
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