DocumentCode :
10139
Title :
Spectrally Resolved Dynamics of Synthesized CdSe/ZnS Quantum Dot/Silica Nanocrystals for Photonic Down-Shifting Applications
Author :
Sadeghimakki, Bahareh ; Jahed, Navid M. S. ; Sivoththaman, Siva
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume :
13
Issue :
4
fYear :
2014
fDate :
Jul-14
Firstpage :
825
Lastpage :
834
Abstract :
Photonic structures capable of luminescence down-shifting (LDS) have strong application potential in several areas of optoelectronics. Such structures can be formed by overcoating quantum dots (QDs) with integrable, transparent layers. In this paper, silica was grown on CdSe/ZnS QDs to form QD/silica nanocrystals (NCs) in a microemulsion synthesis process. The synthesized structures were structurally and optically characterized to understand the growth mechanism, luminescence properties, and the influence of process parameters on excitonic decay and lifetime. Process conditions were established to have single QDs at the centers of the silica particles. The effects of temperature, excitation duration, size of QDs, and type of ligands on decay dynamics were established. Temperature- and time-resolved excitonic decay study of QD/silica NCs suggested carrier-trapping at the QD/silica interface and the exciton-phonon coupling to be the two main nonradiative processes limiting the luminescence efficiency. The synthesized NCs displayed intense photoluminescence (PL) with slight decrease in lifetime. The PL efficiency of the NCs improved for longer illumination. The NC structures that safely embed QDs in transparent medium are good candidates for LDS applications in photovoltaic, imaging, and detection devices.
Keywords :
II-VI semiconductors; cadmium compounds; microemulsions; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; semiconductor quantum dots; silicon compounds; wide band gap semiconductors; zinc compounds; CdSe-ZnS-SiO2; LDS applications; NC structures; PL efficiency; QD-silica NC; QD-silica interface; carrier-trapping; detection devices; exciton-phonon coupling; imaging devices; luminescence down-shifting; luminescence efficiency; luminescence properties; microemulsion synthesis process; nonradiative processes; optoelectronics; overcoating quantum dots; photoluminescence; photonic down-shifting applications; photonic structures; photovoltaic devices; quantum dot-silica nanocrystals; silica particles; spectral resolved dynamics; temperature-resolved excitonic decay; time-resolved excitonic decay; Absorption; Films; Fluorescence; Nanocrystals; Photonics; Silicon compounds; CdSe/ZnS quantum dot (QD); QD/silica nanocrystals (NCs); excitonic decay; ligand exchange; luminescence down-shifting (LDS); photoluminescence (PL); synthesis;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2014.2324973
Filename :
6817600
Link To Document :
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