Title :
High-Temperature Stability of 650-nm Resonant-Cavity Light-Emitting Diodes Fabricated Using Wafer-Bonding Technique on Silicon Substrates
Author :
Lee, Y.C. ; Kuo, H.C. ; Lee, C.E. ; Lu, T.C. ; Wang, S.C. ; Chiou, S.W.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
7/15/2007 12:00:00 AM
Abstract :
AlGalnP-based visible 650-nm GalnP-AlGalnP resonant-cavity light-emitting diodes (RCLEDs) with high-temperature stability were fabricated by wafer-bonding techniques on Si substrates. In this study, the metal-bonding RCLEDs (MBRCLEDs) devices were designed with 84-mum apertures for light output. The MBRCLEDs with a maximum wall-plug efficiency of 13.7% were demonstrated at an injection current of 2.5 mA. In addition, the improved heat sinking of MBRCLEDs led to lower junction temperature, and resulted in a very low power decay of 0.31 dB from room temperature to 100degC at an injection current of 20 mA.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; light emitting diodes; optical fibres; wafer bonding; GalnP-AlGalnP; Si; current 2.5 mA; current 20 mA; heat sinking; injection current; metal-bonding RCLEDs; plastic optical fiber; power decay; resonant-cavity light-emitting diodes; silicon substrates; size 84 mum; temperature 100 degC; temperature 293 K to 298 K; wafer-bonding technique; wall-plug efficiency; wavelength 650 nm; Gallium arsenide; Light emitting diodes; Plastics; Resonance; Silicon; Stability; Substrates; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers; Metal-bonding resonant-cavity light-emitting diodes (MBRCLEDs); plastic optical fiber; resonant-cavity light-emitting diodes (RCLEDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.899445
