DocumentCode :
1013936
Title :
New silicon carbide device techniques
Author :
Bowe, J.J. ; Frost, J.A.
Author_Institution :
Air Force Cambridge Research Center, Bedford, Mass.
Volume :
6
Issue :
2
fYear :
1959
fDate :
4/1/1959 12:00:00 AM
Firstpage :
248
Lastpage :
249
Keywords :
Aluminum; Capacitors; Circuits; Conducting materials; Dielectrics; Diodes; Fabrication; Frequency conversion; Germanium alloys; P-n junctions; Rectifiers; Semiconductivity; Semiconductor materials; Silicon carbide; Surface resistance; Switches; Temperature; Tensile stress; Varactors;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1959.14512
Filename :
1472555
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1013936
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