Title :
1.3–1.55-μ m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology
Author :
Sharifi, Hasan ; Mohammadi, Saeed
Author_Institution :
Purdue Univ., West Lafayette
fDate :
7/15/2007 12:00:00 AM
Abstract :
A heterogeneous 10-Gb/s 1.3- to 1.55-mum optoelectronic receiver is designed and fabricated using a complementary metal-oxide-semiconductor transimpedance amplifier and an InGaAs-InP PIN (p-type, intrinsic, n-type diode) photodiode. The receiver is heterogeneously integrated based on a batch fabrication process which promises low fabrication cost. The receiver measures a transimpedance gain of higher than 50 dBldrOmega over a bandwidth of 6 GHz and demonstrates an open eye diagram with a 1.55-mum 10-Gb/s light source.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light sources; optical fibre communication; optical receivers; p-i-n photodiodes; CMOS-InP optoelectronic receiver; InGaAs-InP; PIN photodiode; bandwidth 6 GHz; batch fabrication process; bit rate 10 Gbit/s; complementary metal-oxide-semiconductor transimpedance amplifier; fabrication cost; heterogeneous optoelectronic receiver; light source; open eye diagram; self-aligned integration technology; wafer level integration technology; wavelength 1.3 mum to 1.55 mum; Bandwidth; CMOS technology; Costs; Diodes; Gain measurement; Indium phosphide; Light sources; Optical device fabrication; Photodiodes; Signal analysis; Advanced electronic packaging; PIN photodiode; complementary metal–oxide–semiconductor (CMOS) analog integrated circuits; optoelectronic receiver; transimpedance amplifier;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.899441
