1.3–1.55-μ m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology

Author

Sharifi, Hasan ; Mohammadi, Saeed

Author_Institution

Purdue Univ., West Lafayette

Volume

19

Issue

14

fYear

2007

fDate

7/15/2007 12:00:00 AM

Firstpage

1066

Lastpage

1068

Abstract

A heterogeneous 10-Gb/s 1.3- to 1.55-mum optoelectronic receiver is designed and fabricated using a complementary metal-oxide-semiconductor transimpedance amplifier and an InGaAs-InP PIN (p-type, intrinsic, n-type diode) photodiode. The receiver is heterogeneously integrated based on a batch fabrication process which promises low fabrication cost. The receiver measures a transimpedance gain of higher than 50 dBldrOmega over a bandwidth of 6 GHz and demonstrates an open eye diagram with a 1.55-mum 10-Gb/s light source.

Keywords

CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light sources; optical fibre communication; optical receivers; p-i-n photodiodes; CMOS-InP optoelectronic receiver; InGaAs-InP; PIN photodiode; bandwidth 6 GHz; batch fabrication process; bit rate 10 Gbit/s; complementary metal-oxide-semiconductor transimpedance amplifier; fabrication cost; heterogeneous optoelectronic receiver; light source; open eye diagram; self-aligned integration technology; wafer level integration technology; wavelength 1.3 mum to 1.55 mum; Bandwidth; CMOS technology; Costs; Diodes; Gain measurement; Indium phosphide; Light sources; Optical device fabrication; Photodiodes; Signal analysis; Advanced electronic packaging; PIN photodiode; complementary metal–oxide–semiconductor (CMOS) analog integrated circuits; optoelectronic receiver; transimpedance amplifier;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.899441

Filename

4252144