Title :
A design theory for the high frequency p-n junction variable capacitor
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
fDate :
4/1/1959 12:00:00 AM
Keywords :
Capacitors; Circuits; Dielectrics; Diodes; Fabrication; Frequency; Frequency conversion; Germanium alloys; Germanium silicon alloys; P-n junctions; Rectifiers; Semiconductor materials; Silicon; Silicon carbide; Silicon germanium; Switches; Tensile stress; Varactors;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14515
