DocumentCode :
1014423
Title :
Analyses of contaminant mobile ions in silicone encapsulants for hermetically equivalent (nonhermetic) IC packaging
Author :
Wong, C.P. ; Looby-Calvert, M.M.
Author_Institution :
Eng. Res. Centre, AT&T Bell Labs., Princeton, NJ, USA
Volume :
16
Issue :
7
fYear :
1993
fDate :
11/1/1993 12:00:00 AM
Firstpage :
731
Lastpage :
734
Abstract :
In situ ionic contaminants, such as sodium, potassium, and chloride, affect the electrical reliability performance of encapsulated integrated circuit (IC) devices. Silicones (either elastomers or gels) are some of the best device encapsulants. However, the purity of the silicone encapsulant is an important issue in hermetically equivalent IC packaging applications. Procedures for analysis of contaminants in the bulk silicone matrix have been developed and evaluated for reproducibility and applicability determining acceptability of encapsulant materials for bipolar, metal oxide semiconductor (MOS), and hybrid IC packaging. These procedures are based on the use of selective ion electrode and atomic absorption techniques to quantify the contaminant ions in the parts per million (ppm) level
Keywords :
MOS integrated circuits; bipolar integrated circuits; circuit reliability; elastomers; encapsulation; hybrid integrated circuits; packaging; seals (stoppers); silicones; K+ ionic contaminants; MOS IC packaging; Na+ ionic contaminants; atomic absorption techniques; bipolar IC packaging; chlorides; contaminant mobile ions; elastomers; electrical reliability performance; encapsulated integrated circuits; gels; hermetically equivalent IC packaging; hybrid IC packaging; nonhermetic IC packaging; purity; reproducibility; selective ion electrode techniques; silicone encapsulants; Aluminum; Ash; Chemical analysis; Conducting materials; Hermetic seals; Information analysis; Integrated circuit packaging; Laboratories; Neodymium; Semiconductor materials;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.257859
Filename :
257859
Link To Document :
بازگشت