Title :
A Novel Silicon Photovoltaic Cell Using a Low-Temperature Quasi-Epitaxial Silicon Emitter
Author :
Farrokh-Baroughi, Mahdi ; Sivoththaman, Siva
Author_Institution :
Waterloo Univ., Waterloo
fDate :
7/1/2007 12:00:00 AM
Abstract :
A new silicon solar cell fabricated using a low-temperature process is demonstrated with a highly conductive (n+) quasi-epitaxial (qEpi-Si) silicon emitter deposited on silicon substrates, without using transparent conductive oxides. The emitter was formed by a plasma-enhanced chemical vapor deposition process on granular multicrystalline silicon (mc-Si) substrates at a substrate temperature of 250 . The new qEpi-Si/(p)mc-Si junction was found to be of good quality for photovoltaic applications. Solar cells of 1- area and conversion efficiencies exceeding 10% have been fabricated in a simple fabrication process and device structure.
Keywords :
epitaxial growth; photovoltaic cells; plasma CVD; silicon; solar cells; granular multicrystalline silicon substrates; low-temperature quasi-epitaxial silicon emitter; plasma-enhanced chemical vapor deposition; silicon photovoltaic cell; silicon solar cell; transparent conductive oxides; Chemical vapor deposition; Photovoltaic cells; Photovoltaic systems; Plasma applications; Plasma chemistry; Plasma temperature; Radio frequency; Silicon; Solar power generation; Substrates; Chemical vapor deposition (CVD); epitaxy; silicon; solar cell;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.897873
