DocumentCode
1014478
Title
P-Channel Germanium FinFET Based on Rapid Melt Growth
Author
Feng, Jia ; Woo, Raymond ; Chen, Shulu ; Liu, Yaocheng ; Griffin, Peter B. ; Plummer, James D.
Author_Institution
Stanford Univ., Stanford
Volume
28
Issue
7
fYear
2007
fDate
7/1/2007 12:00:00 AM
Firstpage
637
Lastpage
639
Abstract
High-performance P-channel Ge FinFETs have been fabricated based on the rapid-melt-growth method. The fully depleted Ge FinFET has an off-state drain leakage current that is two orders of magnitude lower than the partially depleted one. The channel on the {110} surfaces provides an enhancement of the effective hole mobility of 60% and 28% at an effective field of 0.4 MV/cm compared with, respectively, silicon universal hole mobility and our previous work with {100} Ge-on-insulator pMOSFETs.
Keywords
MOSFET; germanium; hole mobility; leakage currents; semiconductor device breakdown; semiconductor device manufacture; silicon-on-insulator; Ge - Element; P-channel FinFET; germanium-on-insulator; hole mobility; off-state drain leakage current; pMOSFETs; rapid melt growth; Etching; Fabrication; FinFETs; Germanium; Helium; Ion implantation; Leakage current; MOSFETs; Scanning electron microscopy; Silicon; FinFET; germanium; germanium-on-insulator (GeOI); rapid melt growth (RMG);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.899329
Filename
4252196
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