DocumentCode :
1014488
Title :
High aspect ratio lines as low distortion, high frequency off-chip interconnects
Author :
Blennemann, Heinrich C. ; Pease, R.Fabian W.
Author_Institution :
IBM Corp., Research Triangle Park, NC, USA
Volume :
16
Issue :
7
fYear :
1993
fDate :
11/1/1993 12:00:00 AM
Firstpage :
692
Lastpage :
698
Abstract :
Achieving dense off-chip interconnection with satisfactory electrical performance is emerging as a major challenge in advanced system engineering. High aspect ratio (HAR) lines, which consist of tall, narrow conductors, are proposed as high frequency off-chip interconnects. They offer low distortion transmission at higher density than striplines. For example, a 35-Ω 5:1 height-to-width differential HAR line could achieve <0.6-dB/cm loss at 1 GHz at a pitch of ~32 μm, commonly achieved only for single-ended lines; as for any differential line, such a differential HAR line would be less prone to Δ-I noise and external interference. Design of HAR lines, including trade-offs between fabrication difficulty and density increase, is discussed. HAR lines were fabricated at a pitch of 30 μm, requiring an aspect ratio of 3 for ~50-Ω characteristic impedance, ⩽0.6-dB/cm loss at 1 GHz, and <5% near-end crosstalk
Keywords :
conductors (electric); crosstalk; packaging; transmission lines; Δ-I noise; 1 GHz; 30 micron; 35 ohm; aspect ratio; characteristic impedance; distortion transmission; external interference; height-to-width differential HAR line; narrow conductors; near-end crosstalk; off-chip interconnects; packaging; planar transmission lines; Attenuation; Conductors; Crosstalk; Fabrication; Frequency; Impedance; Optical distortion; Production facilities; Stripline; Surface resistance;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.257865
Filename :
257865
Link To Document :
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