Title :
Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices
Author :
Guo, Peng ; Dong, Yuan-Wei ; Ji, Xin ; Lu, Yin-Xiang ; Xu, Wei
Author_Institution :
Fudan Univ., Shanghai
fDate :
7/1/2007 12:00:00 AM
Abstract :
Electrical characteristics of a single-layer organic device using 2-(hexahydropyrimidin-2-ylidene)-malononitrile (HPYM) that is interposed between Al/Al2O3 (cathode) and Ag (anode) electrodes were investigated. The application of different positive voltages produced different high-conductance currents, resulting in the multilevel memory capability of the device. The high-conductance states could be erased back to the low-conductance state by the application of a negative bias. The formation of an aluminum oxide layer between Al and HPYM layer could be one effective method to increase the data-retention time but could be irrelevant with the electric-field-induced conductance-state transition of the device.
Keywords :
aluminium compounds; molecular electronics; semiconductor storage; silver; 2-(hexahydropyrimidin-2-ylidene)-malononitrile; Ag; Al-Al2O3; electrical bistability; memory effect; molecule-based devices; nonvolatile multilevel conductance; organic thin film; single-layer organic device; Anodes; Cathodes; Electrodes; Materials science and technology; Nonvolatile memory; Optical materials; Organic materials; Polymer films; Semiconductor materials; Voltage; Electrical bistability; memory effect; multilevel conductance; organic thin film;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.900085