DocumentCode :
1014495
Title :
Diffused silicon nonlinear capacitors
Author :
Bakanowsk, A.E. ; Cranna, N.G. ; Uhlir, A., Jr.
Author_Institution :
Bell Telephone Labs., Murray Hill, N. J.
Volume :
6
Issue :
4
fYear :
1959
Firstpage :
384
Lastpage :
390
Abstract :
Diffused silicon nonlinear capacitors have been fabricated by solid-state diffusion. The resulting graded p-n junction is a planar structure which permits low series resistance Rs relative to the minimum capacitance 
, which is measured at a reverse voltage slightly less than the breakdown voltage. A cutoff frequency 
is used as a figure of merit; values up to 150 kmc have been obtained. These "varactor" diodes may be used as UHF and microwave amplifiers and as harmonic generators. The noise figures of the UHF amplifiers are better than the best noise figures obtainable by present electron-tube techniques. These diodes are also efficient harmonic generators.
, which is measured at a reverse voltage slightly less than the breakdown voltage. A cutoff frequency is used as a figure of merit; values up to 150 kmc have been obtained. These "varactor" diodes may be used as UHF and microwave amplifiers and as harmonic generators. The noise figures of the UHF amplifiers are better than the best noise figures obtainable by present electron-tube techniques. These diodes are also efficient harmonic generators.Keywords :
Breakdown voltage; Capacitance measurement; Capacitors; Diodes; Electrical resistance measurement; Noise figure; P-n junctions; Silicon; Solid state circuits; UHF measurements;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1959.14568
Filename :
1472611
Link To Document :
