DocumentCode :
1014553
Title :
The effect of secondary and backscattered electrons in the parallel-plane diode
Author :
Harris, L.A.
Author_Institution :
General Electric Res. Lab., Schenectady, N. Y.
Volume :
6
Issue :
4
fYear :
1959
Firstpage :
413
Lastpage :
418
Abstract :
Separate calculations are carried out to determine the influence of true, low-energy secondary electrons and of higher-energy backscattered electrons released from the anode of the parallel-plane, space-charge limited diode. Both groups depress the potential, increase the field near the anode, and decrease the net diode current by small but appreciable amounts.
Keywords :
Anodes; Apertures; Cathodes; Diodes; Electrodes; Electron devices; Electron emission; Electron tubes; Helium; Physics; Production; Space charge;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1959.14573
Filename :
1472616
Link To Document :
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