Title :
Future WSI technology: stacked monolithic WSI
Author :
Williams, Ronald ; Marsh, Ogden
Author_Institution :
Technol. Center, Hughes Aircraft Co., Carlsbad, CA, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Describes a methodology for stacking chips vertically and interconnecting them through the chips to achieve a three-dimensional (3D) circuit. This methodology involves the integration of two technologies: indium bump interconnect technology, historically used to fabricate hybrid focal plane arrays, and the precision thinning of bonded silicon wafers by a process called Acuthin. Substantial improvements in computing density, power dissipation, and signal propagation time can be realized. This paper describes some of the techniques and benefits of this 3D interconnect methodology
Keywords :
VLSI; integrated circuit technology; metallisation; monolithic integrated circuits; 3D interconnect methodology; Acuthin; WSI technology; computing density; indium bump interconnect technology; power dissipation; precision thinning; signal propagation time; stacked monolithic WSI; Detectors; Indium; Integrated circuit interconnections; Power system interconnection; Sensor arrays; Silicon; Stacking; Thermal stresses; Wafer bonding; Wafer scale integration;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on