DocumentCode :
1014581
Title :
Future WSI technology: stacked monolithic WSI
Author :
Williams, Ronald ; Marsh, Ogden
Author_Institution :
Technol. Center, Hughes Aircraft Co., Carlsbad, CA, USA
Volume :
16
Issue :
7
fYear :
1993
fDate :
11/1/1993 12:00:00 AM
Firstpage :
610
Lastpage :
614
Abstract :
Describes a methodology for stacking chips vertically and interconnecting them through the chips to achieve a three-dimensional (3D) circuit. This methodology involves the integration of two technologies: indium bump interconnect technology, historically used to fabricate hybrid focal plane arrays, and the precision thinning of bonded silicon wafers by a process called Acuthin. Substantial improvements in computing density, power dissipation, and signal propagation time can be realized. This paper describes some of the techniques and benefits of this 3D interconnect methodology
Keywords :
VLSI; integrated circuit technology; metallisation; monolithic integrated circuits; 3D interconnect methodology; Acuthin; WSI technology; computing density; indium bump interconnect technology; power dissipation; precision thinning; signal propagation time; stacked monolithic WSI; Detectors; Indium; Integrated circuit interconnections; Power system interconnection; Sensor arrays; Silicon; Stacking; Thermal stresses; Wafer bonding; Wafer scale integration;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.257874
Filename :
257874
Link To Document :
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