DocumentCode
1014588
Title
The cylindrical field-effect transistor
Author
Wegener, H.A.Richard
Author_Institution
Tung-Sol Electric Res. Labs., Bloomfield, N. J.
Volume
6
Issue
4
fYear
1959
Firstpage
442
Lastpage
449
Abstract
The characteristics of a cylindrical field-effect transistor are derived analytically on the basis of Shockley´s theory of the planar field-effect transistor. It is found that the cylindrical device is capable of giving twice the (voltage) amplification factor of that of the planar device. Its frequency behavior should be comparable to that of the Shockley unit. Because of the loss of one degree of freedom, the transconductance and power characteristics of the cylindrical field-effect transistor are sharply limited. Experimental data support the analytical results.
Keywords
Conductors; Data analysis; Electron devices; FETs; Frequency; Helium; Impedance; Microwave devices; Neodymium; Oscillators; Poisson equations; Semiconductor materials; Space charge; Transconductance; Uncertainty; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1959.14577
Filename
1472620
Link To Document