DocumentCode
1014593
Title
Study of the Erase Mechanism of MANOS ( Metal/Al2O3/SiN/SiO2/Si) Device
Author
Lai, Sheng-Chih ; Lue, Hang-Ting ; Hsieh, Jong-Yu ; Yang, Ming-Jui ; Chiou, Yan-Kai ; Wu, Chia-Wei ; Wu, Tai-Bor ; Luo, Guang-Li ; Chien, Chao-Hsin ; Lai, Erh-Kun ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution
Macronix Int. Co. Ltd., Hsinchu
Volume
28
Issue
7
fYear
2007
fDate
7/1/2007 12:00:00 AM
Firstpage
643
Lastpage
645
Abstract
The erase characteristics and mechanism of metal- Al2O3-nitride-oxide-silicon (MANOS) devices are extensively studied. We use transient analysis to transform the erase curve (VFB - time) into a J-E curve (J = transient current, E = field in the tunnel oxide) in order to understand the underlying physics. The measured erase current of MANOS is three orders of magnitude higher than that can be theoretically provided by substrate hole current. In addition, the erase current is very sensitive to the Al2O3 processing condition - also inconsistent with substrate hole injection model. Thus, we propose that MANOS erase occurs through an electron detrapping mechanism. We have further carried out a refill test and its results support the detrapping model. Our results suggest that the interfacial layer between Al2O3 and nitride is a key process that dominates the erase mechanism of MANOS.
Keywords
MIS devices; alumina; silicon compounds; transient analysis; tunnelling; Al2O3-SiN-SiO2-Si - Interface; J-E curve; MANOS device; electron detrapping; erase mechanism; field in the tunnel oxide; interfacial layer; metal-oxide-nitride-oxide semiconductor; metal-oxide-nitride-oxide-silicon device; substrate hole injection model; transient analysis; transient current; Chaos; Dielectric substrates; MONOS devices; Materials science and technology; Nonvolatile memory; Photonic band gap; SONOS devices; Silicon compounds; Transient analysis; Tunneling; $hbox{Al}_{2}hbox{O}_{3}$ $hbox{metal}$ $hbox{Al}_{2}hbox{O}_{3}$ $hbox{nitride}$ –$hbox{oxide}$ $hbox{silicon}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.899993
Filename
4252205
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