Channeling effects on ion implantation of bubble material

B+ and A+ have been used in ion implantation of YSm-LuCaGe-IG bubble materials. Experiments with varying dosages, injection angles between the incident direction and axial direction, and varying annealing temperatures have been performed. Channeling effects have been observed in the experiments. When the condition of ion implantation is 70 keV and 2E15B+/cm², the bubble material collapse field region increases with an increase in the injection angle. When the injection angle is 2°, ΔH0is reduced to a minimum of 2 Oe. In Ar+ ion implantation a similar phenomenon has been observed. In the annealing experiments, the samples with 2° injection angles have wider temperature ranges in which hard bubbles can be suppressed. The experiments show that, by the use of an injection angle smaller than 3° for the bubble garnet films, not only can the ion-implantation energy be lowered significantly, but also sufficient damage can be produced to suppress hard bubbles and prepare charged-wall bubble devices.