A Novel Dual-Doping Floating-Gate (DDFG) Flash Memory Featuring Low Power and High Reliability Application

In this letter, a novel Flash memory cell structure using dual doping polysilicon (p-n-p) as the floating gate, which can improve the cell performance and reliability, is proposed. Except for an additional large-angle tilted implantation, the fabrication technology is essentially compatible with standard CMOS technology. Measured results show that the new Flash cell with p-n-p-type floating gate can achieve higher programming speed, lower power, comparable erasing performance, and better data retention characteristics in comparison with conventional n-type floating-gate structure.