• DocumentCode
    1014742
  • Title

    On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs

  • Author

    Su, Pin ; Kuo, Jack J Y

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • Volume
    28
  • Issue
    7
  • fYear
    2007
  • fDate
    7/1/2007 12:00:00 AM
  • Firstpage
    649
  • Lastpage
    651
  • Abstract
    This letter reports a new mechanism for the enhanced impact-ionization rate (Isub/Id) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (Vdsat), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, Vdsat becomes lower, resulting in the observed Vg-dependent enhancement in Isub/Id. This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.
  • Keywords
    MOSFET; carrier mobility; hot carriers; impact ionisation; channel electric field; enhanced impact ionization; hot-carrier effect; pinch-off voltage; strain-enhanced mobility; uniaxial strained MOSFET; Capacitive sensors; Hot carrier effects; Impact ionization; Lifting equipment; MOSFET circuits; Photonic band gap; Silicon; Strain control; Strain measurement; Voltage; Hot-carrier effect; impact ionization; strained-silicon; substrate current;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.900297
  • Filename
    4252221
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1014742