DocumentCode :
1014742
Title :
On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs
Author :
Su, Pin ; Kuo, Jack J Y
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Volume :
28
Issue :
7
fYear :
2007
fDate :
7/1/2007 12:00:00 AM
Firstpage :
649
Lastpage :
651
Abstract :
This letter reports a new mechanism for the enhanced impact-ionization rate (Isub/Id) present in short- channel uniaxial strained p-MOSFETs. Through the pinch-off voltage (Vdsat), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, Vdsat becomes lower, resulting in the observed Vg-dependent enhancement in Isub/Id. This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.
Keywords :
MOSFET; carrier mobility; hot carriers; impact ionisation; channel electric field; enhanced impact ionization; hot-carrier effect; pinch-off voltage; strain-enhanced mobility; uniaxial strained MOSFET; Capacitive sensors; Hot carrier effects; Impact ionization; Lifting equipment; MOSFET circuits; Photonic band gap; Silicon; Strain control; Strain measurement; Voltage; Hot-carrier effect; impact ionization; strained-silicon; substrate current;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.900297
Filename :
4252221
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1014742
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