• DocumentCode
    1014755
  • Title

    Serial-Link Bus: A Low-Power On-Chip Bus Architecture

  • Author

    Ghoneima, Maged ; Ismail, Yehea ; Khellah, Muhammad M. ; Tschanz, James ; De, Vivek

  • Author_Institution
    Very Large Scale Integration Design Group, NVIDIA Corp., Santa Clara, CA, USA
  • Volume
    56
  • Issue
    9
  • fYear
    2009
  • Firstpage
    2020
  • Lastpage
    2032
  • Abstract
    As technology scales, the shrinking wire width increases the interconnect resistivity, while the decreasing interconnect spacing significantly increases the coupling capacitance. This paper proposes reducing the number of bus lines of the conventional parallel-line bus (PLB) architecture by multiplexing each m-bits onto a single line. This bus architecture, the serial-link bus (SLB), transforms an n-bit conventional PLB into an n/m-line (serial link) bus. The advantage of SLBs is that they have fewer lines, and if the bus width is kept the same, SLBs will have a larger line pitch. Increasing the line width has a twofold reduction effect on the line resistance; as the resistivity of sub-100 nm wires drops significantly, the line width increases. Also, increasing the line width and spacing reduces the coupling capacitance between adjacent lines, but increases the line-to-ground capacitance. Thus, an optimum degree of multiplexing m opt and an optimum width to pitch ratio etaopt exist, which minimizes the bus energy dissipation and maximizes the bus throughput per unit area. The optimum degree of multiplexing and optimum width-to-pitch ratio for maximum throughput per unit area and minimum energy dissipation for the 25-130-nm technologies was determined in this paper. Also, an encoding technique was proposed and implemented to reduce the switch activity penalty due to serialization. HSPICE simulations show that for the same throughput per unit area as conventional parallel-line data buses, the SLB architecture reduces the energy dissipation by up to 31% for a 64-bit bus implemented in an intermediate metal layer of a 50-nm technology, and a reduction of 53% is projected for a 25-nm technology.
  • Keywords
    low-power electronics; system-on-chip; bus energy dissipation minimization; coupling capacitance; interconnect resistivity; low-power on-chip bus architecture; parallel-line bus architecture; serial-link bus; size 25 nm to 130 nm; word length 64 bit; Coupling capacitance; low-power; on-chip buses; on-chip interconnect; serial link;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2008.2010155
  • Filename
    4694049