Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

Author

Zhang, Zhen ; Qiu, Zhijun ; Liu, Ran ; Ostling, Mikael ; Zhang, Shi-Li

Author_Institution

Royal Inst. of Technol., Kista

Volume

28

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

565

Lastpage

568

Abstract

An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to ~1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV. The process window for the most pronounced SBH modification is dopant dependent.

Keywords

Schottky diodes; Schottky gate field effect transistors; annealing; arsenic; boron; indium; ion implantation; nickel compounds; phosphorus; platinum compounds; semiconductor doping; tuning; As - Element; B - Element; In - Element; NiSi - Interface; P - Element; PtSi - Interface; Schottky diodes; Schottky-barrier height tuning; drive-in annealing; ion implantation; silicide films; Annealing; Application specific integrated circuits; Charge carrier processes; Communications technology; Ion implantation; Laboratories; MOSFETs; Schottky diodes; Silicides; Thermal resistance; Dopant segregation; Schottky barrier (SB) lowering; Schottky diode; silicide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.900295

Filename

4252230