Title :
Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal
Author :
Zhang, Zhen ; Qiu, Zhijun ; Liu, Ran ; Ostling, Mikael ; Zhang, Shi-Li
Author_Institution :
Royal Inst. of Technol., Kista
fDate :
7/1/2007 12:00:00 AM
Abstract :
An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to ~1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV. The process window for the most pronounced SBH modification is dopant dependent.
Keywords :
Schottky diodes; Schottky gate field effect transistors; annealing; arsenic; boron; indium; ion implantation; nickel compounds; phosphorus; platinum compounds; semiconductor doping; tuning; As - Element; B - Element; In - Element; NiSi - Interface; P - Element; PtSi - Interface; Schottky diodes; Schottky-barrier height tuning; drive-in annealing; ion implantation; silicide films; Annealing; Application specific integrated circuits; Charge carrier processes; Communications technology; Ion implantation; Laboratories; MOSFETs; Schottky diodes; Silicides; Thermal resistance; Dopant segregation; Schottky barrier (SB) lowering; Schottky diode; silicide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.900295
