Title :
Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD
Author :
Zhou, Wei ; Tang, Chak Wah ; Zhu, Jia ; Lau, Kei May ; Zeng, Y. ; Liu, H.G. ; Tao, N.G. ; Bolognesi, C.R.
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Kowloon
fDate :
7/1/2007 12:00:00 AM
Abstract :
Good-quality metamorphic InP buffer layers have been successfully grown on GaAs substrates by metal-organic chemical vapor deposition. Characterization by atomic force microscope, transmission electron microscopy, high-resolution X-ray diffraction, and Hall measurements indicated that the layers are of high crystalline quality, good mobility, and excellent surface morphology. On this buffer, we demonstrated the first metamorphic InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with good material quality and device performance. Metamorphic DHBTs showed direct-current and radio-frequency characteristics that are comparable to those grown on lattice-matched InP substrates.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; atomic force microscopy; buffer layers; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface morphology; transmission electron microscopy; HBT; Hall measurements; InP-GaAsSb-InP - Interface; MOCVD; atomic force microscope; buffer layers; direct-current; double heterojunction bipolar transistors; high-resolution X-ray diffraction; metal-organic chemical vapor deposition; metamorphic heterostructure; radio-frequency; surface morphology; transmission electron microscopy; Atomic force microscopy; Atomic measurements; Buffer layers; Chemical vapor deposition; Double heterojunction bipolar transistors; Force measurement; Gallium arsenide; Indium phosphide; MOCVD; Transmission electron microscopy; Double heterojunction bipolar transistor (DHBT); GaAs substrate; InP/GaAsSb/InP; metamorphic buffer;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.899455
