Title :
Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits
Author :
Chan, Mansun ; Yu, Bin ; Ma, Zhi-Jian ; Nguyen, Cuong T. ; Hu, Chenming ; Ko, Ping K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
This paper compared the performance of conventional fully depleted (FD) SOI MOSFETs and body-grounded nonfully depleted (NFD) SOI MOSFETs for analog applications, A new low-barrier body-contact (LBBC) technology has been developed to provide effective body contact. Experimental results show that the NFD MOSFET´s with LBBC structure give one order of magnitude higher output resistance, significantly lower flicker noise, improved subthreshold characteristics, and minimal threshold voltage variation compared with conventional FD SOI MOSFETs. The device characteristics of the LBBC MOSFET´s are more desirable for fabricating high performance analog or mixed analog/digital CMOS circuits
Keywords :
CMOS analogue integrated circuits; MOSFET; SIMOX; flicker noise; mixed analogue-digital integrated circuits; semiconductor device noise; I-V characteristics; SIMOX wafers; analog CMOS circuits; body-grounded nonfully depleted SOI MOSFET; flicker noise; fully depleted SOI MOSFET; low-barrier body-contact technology; mixed analog/digital CMOS circuits; nMOSFET; output resistance; pMOSFET; subthreshold characteristics; threshold voltage variation; 1f noise; CMOS analog integrated circuits; CMOS digital integrated circuits; Contacts; Immune system; MOSFETs; Semiconductor films; Silicon; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
