DocumentCode :
1014917
Title :
Gallium-Arsenide diffused diodes
Author :
Halpern, Joel ; Lowen, J. ; Rediker, R.H.
Author_Institution :
Massachusetts Institute of Technology, Lincoln Lab., Lexington, Mass.
Volume :
7
Issue :
2
fYear :
1960
fDate :
4/1/1960 12:00:00 AM
Firstpage :
108
Lastpage :
108
Keywords :
Atomic measurements; Contacts; Cutoff frequency; Diodes; Electric variables; Electrical resistance measurement; Electron beams; Etching; Fabrication; Gallium arsenide; Geometry; Germanium; Gold; Pollution measurement; Semiconductor diodes; Switches; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1960.14612
Filename :
1472719
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1014917
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