Title :
Speed and efficiency in multiple p-i-n photodetectors
Author :
Sadra, K. ; Srinivasan, A. ; Neikirk, D.P. ; Streetman, B.G.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Austin, TX, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
We present a theoretical evaluation of the application of multiple intrinsic layers to enhancing the quantum efficiency of high-speed p-i-n photodetectors. It is shown that the use of multiple layers may lead to substantial improvements in the efficiency of detectors operating in the 20-100-GHz range, provided that the device area is reduced to limit the intrinsic capacitance and special care is taken to avoid large parasitic effects. Potential fabrication schemes are discussed
Keywords :
capacitance; optical communication equipment; optical films; p-i-n photodiodes; photodetectors; 20 to 100 GHz; device area; fabrication schemes; high-speed; intrinsic capacitance; multiple intrinsic layers; multiple p-i-n photodetectors; parasitic effects; quantum efficiency; Absorption; Detectors; Equations; Frequency; Mirrors; PIN photodiodes; Parasitic capacitance; Photodetectors; Quantum capacitance; Quantum mechanics;
Journal_Title :
Lightwave Technology, Journal of
