DocumentCode
1015079
Title
G-band metamorphic HEMT-based frequency multipliers
Author
Campos-Roca, Yolanda ; Schwörer, Christoph ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Volume
54
Issue
7
fYear
2006
fDate
7/1/2006 12:00:00 AM
Firstpage
2983
Lastpage
2992
Abstract
Two monolithic G-band active frequency multipliers have been designed and fabricated using coplanar-waveguide technology. The monolithic microwave integrated circuits are a frequency tripler for an output frequency of 140 GHz and a 110-220-GHz frequency doubler. The tripler demonstrates a maximum conversion gain of -11 dB for an input power of 9 dBm, whereas the doubler achieves a conversion gain of -7 dB for a 2.5-dBm input signal. The circuits have been realized using two InAlAs/InGaAs-based metamorphic high electron-mobility transistor processes with different gate lengths of 100 and 50 nm, respectively.
Keywords
HEMT circuits; III-V semiconductors; MMIC frequency convertors; aluminium compounds; coplanar waveguides; frequency multipliers; gallium arsenide; indium compounds; 100 nm; 110 to 220 GHz; 50 nm; G-band metamorphic HEMT; InAlAs-InGaAs; coplanar waveguide; frequency doubler; frequency multipliers; frequency tripler; metamorphic high electron-mobility transistor; monolithic microwave integrated circuits; Costs; Frequency; Gallium arsenide; HEMTs; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Voltage-controlled oscillators; mHEMTs; Coplanar waveguide (CPW); frequency multiplier; harmonic terminations; metamorphic high electron-mobility transistor (MHEMT); millimeter wave; monolithic microwave integrated circuit (MMIC);
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2006.877034
Filename
1650438
Link To Document