Room-temperature operation of InP-based InAs quantum dot laser

Author

Jin Soo Kim ; Jin Hong Lee ; Sung Ui Hong ; Won Seok Han ; Ho-Sang Kwack ; Chul Wook Lee ; Dae Kon Oh

Author_Institution

Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

16

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1607

Lastpage

1609

Abstract

A ridge waveguide quantum dot (QD) laser with a stripe width of 15 μm was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 μm, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum dot lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.501 mum; 135 K; 15 mum; 200 to 298 K; InAlGaAs-InAlAs-InP; InP; InP-based InAs quantum dot laser; optical properties; photoluminescence; ridge waveguide quantum dot laser; room temperature lasing; structural properties; threshold current density; Gallium arsenide; Indium phosphide; Optical materials; Quantum dot lasers; Substrates; Surface emitting lasers; Temperature dependence; Temperature distribution; US Department of Transportation; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.828494

Filename

1308239