DocumentCode
1015249
Title
Improvement of the direct modulation behavior of semiconductor lasers by using a holding beam
Author
Morthier, G. ; Moeyersoon, B.
Author_Institution
Dept. of Inf. Technol., Ghent Univ. IMEC, Gent, Belgium
Volume
16
Issue
7
fYear
2004
fDate
7/1/2004 12:00:00 AM
Firstpage
1616
Lastpage
1618
Abstract
We show theoretically that the direct modulation properties of semiconductor lasers can be significantly improved by the injection of a so-called holding beam-a continuous-wave beam at the transparency wavelength of the gain medium. Both the small-signal and the large-signal behavior are investigated.
Keywords
electro-optical modulation; laser beams; optical pulse shaping; semiconductor lasers; continuous wave beam; direct modulation behavior; holding beam; laser modulation; optical pulse shaping; semiconductor lasers; transparency wavelength; Charge carrier lifetime; Chirp modulation; Damping; Laser beams; Laser theory; Optical modulation; Pulse shaping methods; Resonance; Resonant frequency; Semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2004.829534
Filename
1308242
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