Title :
Modeling oxide thickness dependence of charging damage by plasma processing
Author :
Shin, Hyungcheol ; Noguchi, Ko ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Develops a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The current is deduced from capacitance-voltage (CV) curves of metal-oxide-semiconductor (MOS) capacitors after plasma etch. The model predicts the oxide thickness dependence of plasma charging successfully. It is shown that plasma acting on a very thin oxide during processing may be modeled as essentially a current source. Thus the damage will not be greatly exacerbated as oxide thickness is further reduced in the future. Gate oxide breakdown voltage distribution of MOS capacitors after plasma processing can be predicted accurately from that of a control wafer by using a defect-induced breakdown model.<>
Keywords :
MOS integrated circuits; VLSI; electric breakdown of solids; integrated circuit technology; interface electron states; metal-insulator-semiconductor devices; sputter etching; MOS capacitors; VLSI technology; capacitance-voltage curves; charging damage; defect-induced breakdown model; gate oxide breakdown voltage distribution; interface trap generation; oxide thickness dependence; plasma etch; plasma processing; quantitative model; Breakdown voltage; Capacitance-voltage characteristics; Etching; MOS capacitors; Plasma applications; Plasma materials processing; Plasma sources; Predictive models; Semiconductor device modeling; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
