Title :
A 105-nm ultrawide-band gain-flattened amplifier combining C- and L-band dual-core EDFAs in a parallel configuration
Author :
Lu, Yi Bin ; Chu, P.L. ; Alphones, A. ; Shum, P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
7/1/2004 12:00:00 AM
Abstract :
A novel structure for ultrawide-band gain-flattened amplifier by combining two pieces of C- and L-band dual-core erbium-doped fibers is reported. This novel amplifier has a flat gain of 15 dB over a wavelength range of 105 nm (1515-1620 nm). The gain variation for the C-band flat gain region (1515-1555 nm) is 1.3 dB, and for the L-band flat gain region (1562-1620 nm) is 1.5 dB. The noise figure varies from 4.5 to 4.8 dB over the whole bandwidth. The structure of the design is simple without the need of additional expensive components.
Keywords :
erbium; optical communication equipment; optical fibre amplifiers; wavelength division multiplexing; 1.3 dB; 1.5 dB; 105 nm; 15 dB; 1515 to 1620 nm; 4.5 to 4.8 dB; C-band dual-core EDFA; C/L-band combiner; C/L-band splitter; L-band dual-core EDFA; double band amplifier; erbium-doped fibers; gain-flattened amplifier; ultrawide-band amplifier; wavelength-division-multiplexing network; Bandwidth; Doped fiber amplifiers; Erbium-doped fiber amplifier; Gain; Noise figure; Optical amplifiers; Optical fiber amplifiers; Optical fiber communication; WDM networks; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.827964