Title :
Process variables which affect germanium transistor reliability
Author_Institution :
Bell Telephone Labs., Inc., Allentown, Pa.
fDate :
4/1/1960 12:00:00 AM
Keywords :
Bandwidth; Coupling circuits; Frequency; Gain; Germanium; Low-noise amplifiers; Masers; Noise figure; Noise measurement; Power amplifiers; Silicon; Switching circuits; Waveguide discontinuities;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1960.14654
