DocumentCode
1015356
Title
Self-aligned metalization technique for deep-submicron IC´s
Author
Lifshitz, Nadia ; Pinto, Mark R. ; Rafferty, Conor S. ; Fang, S.C.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
14
Issue
11
fYear
1993
Firstpage
518
Lastpage
519
Abstract
The authors propose a new metalization scheme for deep-submicron IC\´s that enables fabrication of relatively wide, reliable metal interconnects in a narrow (>
Keywords
SRAM chips; chemical vapour deposition; etching; integrated circuit technology; metallisation; 0.25 mum; 0.4 mum; CVD conformal deposition; SRAM array; bit interconnects; bit-not interconnects; deep-submicron IC; etchback; oxide sidewalls; reliable metal interconnects; self-aligned metalization; standard lithographic processing; Aluminum; Electromigration; Etching; Fabrication; Lithography; Random access memory; Substrates; Tungsten; Writing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.258001
Filename
258001
Link To Document