Title :
Single-event charge enhancement in SOI devices
Author :
Massengill, Lloyd W. ; Kerns, David V., Jr. ; Kerns, Sherra E. ; Alles, M.L.
Author_Institution :
Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.<>
Keywords :
CMOS integrated circuits; ion beam effects; semiconductor-insulator boundaries; SOI devices; body-tied CMOS; body-to-source tie; direct ion-induced photocurrent; ion strike; local lateral bipolar current; silicon-on-insulator; single-particle ion effects; soft-error rates; Body regions; Circuits; Electrical resistance measurement; Immune system; MOSFETs; Photoconductivity; Random access memory; Read-write memory; Silicon on insulator technology; Single event upset;
Journal_Title :
Electron Device Letters, IEEE
