• DocumentCode
    1015396
  • Title

    Single-event charge enhancement in SOI devices

  • Author

    Massengill, Lloyd W. ; Kerns, David V., Jr. ; Kerns, Sherra E. ; Alles, M.L.

  • Author_Institution
    Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    11
  • Issue
    2
  • fYear
    1990
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.<>
  • Keywords
    CMOS integrated circuits; ion beam effects; semiconductor-insulator boundaries; SOI devices; body-tied CMOS; body-to-source tie; direct ion-induced photocurrent; ion strike; local lateral bipolar current; silicon-on-insulator; single-particle ion effects; soft-error rates; Body regions; Circuits; Electrical resistance measurement; Immune system; MOSFETs; Photoconductivity; Random access memory; Read-write memory; Silicon on insulator technology; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.46941
  • Filename
    46941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1015396