Spin Transfer Magnetization Switching Read/Write Cycle Test in MgO-Based Magnetic Tunnel Junctions

Author

Lee, J.M. ; Ye, L.X. ; Weng, M.C. ; Chen, Y.C. ; Li, Simon C. ; Su, J.P. ; Wu, Te-Ho

Author_Institution

Nat. Yunlin Univ. of Sci. &Technol., Touliu

Volume

43

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

3349

Lastpage

3353

Abstract

We present the results of spin transfer torque magnetization switching results for some MgO-based magnetic tunnel junctions (MTJ) with tunneling magnetoresistance (TMR) ratios of 38.6% to 200% and critical current densities of 1.032 times 10⁷ A/cm² down to 1.68 times 10⁶ A/cm². We observed 2.2 times 10⁴ stable read/write (R/W) cycles before failure under the spin transfer torque magnetization switching. The synchronized variations in both high and low magnetoresistance (MR) over the stable R/W cycles indicate that magnetization reversal into either high or low state occurs in parallel. We made a stability analysis for high and low MR distribution matching to a normalized fraction of stable cycles.

Keywords

magnetisation reversal; spin dynamics; tunnelling magnetoresistance; MgO - Binary; TMR; magnetic tunnel junction; magnetization reversal; read/write cycle test; spin transfer magnetization switching; spin transfer torque magnetization switching; synchronized variation; tunneling magnetoresistance; Electrical resistance measurement; Magnetic switching; Magnetic tunneling; Magnetization; Polarization; Pulse measurements; Stability analysis; Testing; Torque; Tunneling magnetoresistance; MRAM; MTJ; MgO; TMR; read/write cycle; spin transfer torque; stability analysis;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.899146

Filename

4252298