DocumentCode
1015600
Title
Anti-Static Robustness Enhancement and High-Frequency Noise Pickup Immunity by Internal Shunting for Tunneling Magnetoresistive Sensors
Author
Lai, Anthony Wai Yuen ; Leung, Eric Cheuk Wing ; Wong, Pak Kin ; Shimizu, Tad ; Kagami, Takeo ; Dovek, Moris ; Hu, David
Author_Institution
Winnerway Ind. Area SAE Magnetics (HK) Ltd., Dongguan
Volume
44
Issue
1
fYear
2008
Firstpage
104
Lastpage
106
Abstract
Internal shunting is introduced on tunneling magnetoresistive heads to enhance device anti-static robustness and external high-frequency noise pickup immunity. The details of the shunting scheme and the mechanism leading to both anti-static robustness and reduced high-frequency noise pickup are discussed.
Keywords
magnetic noise; magnetic sensors; magnetoresistive devices; tunnelling magnetoresistance; anti-static robustness enhancement; direct charged device model; electrostatic discharge; external high-frequency noise pickup immunity; high-frequency noise pickup immunity; internal shunting; tunneling magnetoresistive sensors; Acoustical engineering; Capacitive sensors; Capacitors; Electrostatic discharge; Magnetic heads; Magnetic noise; Magnetic sensors; Noise robustness; Tunneling magnetoresistance; Voltage; Direct charged device model (DCDM); electrostatic discharge (ESD); noise immunity; shunting;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2007.911025
Filename
4407601
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