DocumentCode
1015607
Title
Four-micron period ion-implanted bubble test circuits
Author
Nelson, T.J. ; Fratello, V.J. ; Muehlner, D.J. ; Roman, B.J. ; Slusky, S.E.G.
Author_Institution
Bell Communication Research, Murray Hill, NJ, USA
Volume
22
Issue
2
fYear
1986
fDate
3/1/1986 12:00:00 AM
Firstpage
93
Lastpage
100
Abstract
Packaged magnetic bubble test circuits made with 4-µm period ion-implanted circuits were operated over -55° to +110°C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films wih lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive readout (NDRO) detection was not realized with these "flat" bubbles.
Keywords
Magnetic bubble device fabrication; Magnetic bubble logic circuits; Circuit synthesis; Circuit testing; Composite materials; Conductive films; Damping; Detectors; Garnet films; Magnetic circuits; Magnetic films; Tracking loops;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1986.1064278
Filename
1064278
Link To Document