DocumentCode :
1015607
Title :
Four-micron period ion-implanted bubble test circuits
Author :
Nelson, T.J. ; Fratello, V.J. ; Muehlner, D.J. ; Roman, B.J. ; Slusky, S.E.G.
Author_Institution :
Bell Communication Research, Murray Hill, NJ, USA
Volume :
22
Issue :
2
fYear :
1986
fDate :
3/1/1986 12:00:00 AM
Firstpage :
93
Lastpage :
100
Abstract :
Packaged magnetic bubble test circuits made with 4-µm period ion-implanted circuits were operated over -55° to +110°C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films wih lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive readout (NDRO) detection was not realized with these "flat" bubbles.
Keywords :
Magnetic bubble device fabrication; Magnetic bubble logic circuits; Circuit synthesis; Circuit testing; Composite materials; Conductive films; Damping; Detectors; Garnet films; Magnetic circuits; Magnetic films; Tracking loops;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1986.1064278
Filename :
1064278
Link To Document :
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