• DocumentCode
    1015690
  • Title

    Observation of multi-state negative differential conductivity in periodic delta-doped superlattice

  • Author

    Liu, W.C. ; Sun, C.Y. ; Lour, W.S.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan
  • Volume
    138
  • Issue
    3
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    424
  • Lastpage
    426
  • Abstract
    A novel multi-state S-shaped negative differential conductivity (NDC) δ-doped superlattice structure with long period (Zp =600 Å) is observed and investigated. The multi-state NDC originates from a sequential sub-avalanche multiplication in the superlattice periods. Three different GaAs superlattices, i.e. one-period, three-period, and nine-period δ(n+)-i-δ(p+ )-i δ-doped superlattices, were used. A different number of S-shaped NDCs are exhibited in each superlattice. An interesting hysteresis phenomenon was also apparent in the nine-period superlattice structure. It was attributed to the existence of heavy `trapped´ holes
  • Keywords
    III-V semiconductors; gallium arsenide; hole traps; hysteresis; semiconductor doping; semiconductor superlattices; GaAs superlattices; hysteresis phenomenon; multi-state S-shaped NDC; multi-state negative differential conductivity; periodic delta-doped superlattice; semiconductors; sequential sub-avalanche multiplication; trapped holes;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    258040