Title :
Observation of multi-state negative differential conductivity in periodic delta-doped superlattice
Author :
Liu, W.C. ; Sun, C.Y. ; Lour, W.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A novel multi-state S-shaped negative differential conductivity (NDC) δ-doped superlattice structure with long period (Zp =600 Å) is observed and investigated. The multi-state NDC originates from a sequential sub-avalanche multiplication in the superlattice periods. Three different GaAs superlattices, i.e. one-period, three-period, and nine-period δ(n+)-i-δ(p+ )-i δ-doped superlattices, were used. A different number of S-shaped NDCs are exhibited in each superlattice. An interesting hysteresis phenomenon was also apparent in the nine-period superlattice structure. It was attributed to the existence of heavy `trapped´ holes
Keywords :
III-V semiconductors; gallium arsenide; hole traps; hysteresis; semiconductor doping; semiconductor superlattices; GaAs superlattices; hysteresis phenomenon; multi-state S-shaped NDC; multi-state negative differential conductivity; periodic delta-doped superlattice; semiconductors; sequential sub-avalanche multiplication; trapped holes;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G