Avalanche breakdown voltages of diffused silicon and germanium diodes

Avalanche breakdown is defined in terms of the diode´s electrical characteristics as well as the internal physical processes. Using the latter definition, and the basic diffusion equation, breakdown voltage is rigorously computed for various diffused junctions. The calculation process is described and similarities to both linear and abrupt junctions are pointed out. Graphs are presented showing breakdown voltage as a function of diffusion parameters for both germanium and silicon. Intermediate charts used in the calculations are shown also. These give maximum electric field in junction and normalized breakdown voltage for families of diffusions.