DocumentCode :
1015805
Title :
An analysis of inertial inductance in a junction diode
Author :
Ladany, I.
Author_Institution :
U. S. Nav. Res. Lab., Washington, D. C.
Volume :
7
Issue :
4
fYear :
1960
Firstpage :
303
Lastpage :
310
Abstract :
When the injected carrier concentration is not small compared to the equilibrium concentration, drift and diffusion processes interact, and an inductance is developed in the base region. This phenomenon has been analysed by calculation of the small-signal impedance of a PIR diode. Simple expressions have been obtained for the case 
as well as 
, where ω2is the product of the radian frequency and the diffusion transit time. For intermediate values of ω, the impedance contains an integral which has been expressed in terms of a tabulated function. Curves are presented showing the diode impedance as a function of frequency and forward bias. For low bias the reactance is capacitive, but with increasing bias, provided the frequency is not too high, the reactance becomes inductive. The resistive component also shows a frequency dependence. The maximum inductive reactance occurs when 
and the 
does not exceed 1.
as well as , where ω2is the product of the radian frequency and the diffusion transit time. For intermediate values of ω, the impedance contains an integral which has been expressed in terms of a tabulated function. Curves are presented showing the diode impedance as a function of frequency and forward bias. For low bias the reactance is capacitive, but with increasing bias, provided the frequency is not too high, the reactance becomes inductive. The resistive component also shows a frequency dependence. The maximum inductive reactance occurs when and the does not exceed 1.Keywords :
Conductivity; Diffusion processes; Doping; Electron devices; Electron mobility; Frequency dependence; Helium; Impedance; Inductance; P-n junctions; Pulse modulation; Semiconductor diodes; Signal analysis; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1960.14698
Filename :
1472804
Link To Document :
