Title :
Early voltage in double heterojunction bipolar transistors
Author :
Jahan, M.M. ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
The Early voltage for abrupt double heterojunction bipolar transistors (DHBTs) has been calculated by using an effective junction velocity (Sc) at the base-collector heterojunction. Sc is obtained by self-consistently partitioning thermionic and quantum mechanical tunneling currents. Unlike single heterojunction bipolar transistors (SHBTs), the Early voltage varies very rapidly at low reverse bias and approaches the SHBT-limit at sufficiently high reverse bias. This is attributed to the presence of an energy barrier at the b-c heterojunction
Keywords :
heterojunction bipolar transistors; semiconductor device models; tunnelling; DHBT; Early voltage; abrupt double heterojunction; base-collector heterojunction; double heterojunction bipolar transistors; effective junction velocity; energy barrier; reverse bias; Dielectric constant; Double heterojunction bipolar transistors; Energy barrier; Heterojunction bipolar transistors; Linearity; Microwave devices; Quantum mechanics; Semiconductor devices; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
