An analysis and representation of junction transistors in the saturation state

Three diffusion processes are used to analyze the transistor behavior in Region III. This leads to a new equivalent circuit representation which is a superposition of the active-state and saturation-state models. Saturation state of the transistor is understood here as a state in which both emitter and collector junctions are so biased to obtain an uniform distribution of the minority carriers in the base. Saturation can be treated separately and be represented by a new independent model. Transient analysis made on these models, representing saturation and active states, leads us to the storage and decay phenomena, and storage and decay times agree with those calculated by others.