DocumentCode
1015979
Title
Parametric amplifier using a silver bonded diode
Author
Kita, S. ; Okajima, T. ; Chung, M.
Author_Institution
Nippon Telegraph and Telephone Public Corp., Tokyo, Japan
Volume
8
Issue
2
fYear
1961
fDate
3/1/1961 12:00:00 AM
Firstpage
105
Lastpage
109
Abstract
Recently, the parametric amplifier has merited attention because of its low-noise characteristics. A novel diode has been designed which is suitable for use in a parametric amplifier. The diode is a bonded type and is composed of a silver-gallium whisker and an N-type germanium. The cutoff frequency of the silver bonded diode is higher than 150 kMc. The parametric amplifier was made using these diodes at 6 kMc and 11 kMc, and stable gain of more than 20 db was obtained. The noise figures were approximately 5 db and 6.5 db at 6 kMc and 11 kMc, respectively.
Keywords
Bonding; Capacitance; Contacts; Cutoff frequency; Electron devices; Germanium; Low-noise amplifiers; Microwave amplifiers; Semiconductor diodes; Semiconductor optical amplifiers; Silver; Voltage; Welding;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1961.14716
Filename
1472879
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